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IRFP3710 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP3710
상세설명  Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP3710 데이터시트(HTML) 2 Page - International Rectifier

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IRFP3710
2
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
D
V(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
Reference to 25°C, ID = 1mA
…
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.025
W
VGS = 10V, ID = 28A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
20
–––
–––
S
VDS = 25V, ID = 28A
…
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
190
ID = 28A
Qgs
Gate-to-Source Charge
–––
–––
26
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
82
VGS = 1.7V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 50V
tr
Rise Time
–––
59
–––
ID = 28A
td(off)
Turn-Off Delay Time
–––
58
–––
RG = 2.5W
tf
Fall Time
–––
48
–––
RD = 1.7W, See Fig. 10
„…
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3000 –––
VGS = 0V
Coss
Output Capacitance
–––
640
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
330
–––
ƒ = 1.0MHz, See Fig. 5
…
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
5.0
IDSS
Drain-to-Source Leakage Current
13
‚ Starting TJ = 25°C, L = 1.4mH
RG = 25W , IAS = 28A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ƒ I
SD £ 28A, di/dt £ 460A/µs, V
DD £ V(BR)DSS,
TJ £ 175°C
„ Pulse width £ 300µs; duty cycle £ 2%.
… Uses IRF3710 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
…
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
…
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 28A, VGS = 0V
„
trr
Reverse Recovery Time
–––
210
320
ns
TJ = 25°C, IF = 28A
Qrr
Reverse RecoveryCharge
–––
1.7
2.6
µC
di/dt = 100A/µs
„…
Source-Drain Ratings and Characteristics
S
D
G
A
57
180
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)


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