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IRFP460P 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP460P 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page IRFP460P HEXFET® Power MOSFET Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. The solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. S D G VDSS = 500V RDS(on) = 0.27Ω ID = 20A l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling Description Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 80 PD @TC = 25°C Power Dissipation 280 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 960 mJ IAR Avalanche Current 20 A EAR Repetitive Avalanche Energy 28 mJ dv/dt Peak Diode Recovery dv/dt 3.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance 01/17/01 www.irf.com 1 l Simple Drive Requirements l Solder Plated for Reflowing Maximum Reflow Temperature 230 (Time above 183 °C should not exceed 100s) °C TO-247AC PD-93946A |
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