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IRFP460P 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP460P
상세설명  Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP460P 데이터시트(HTML) 2 Page - International Rectifier

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IRFP460P
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.63
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.27
VGS = 10V, ID = 12A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
13
–––
–––
SVDS = 50V, ID =12A
–––
–––
25
µA
VDS = 500V, VGS = 0V
–––
–––
250
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS =-20V
Qg
Total Gate Charge
–––
–––
210
ID = 20A
Qgs
Gate-to-Source Charge
–––
–––
29
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
110
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
18
–––
VDD = 250V
tr
Rise Time
–––
59
–––
ID = 20A
td(off)
Turn-Off Delay Time
–––
110
–––
RG = 4.3Ω
tf
Fall Time
–––
58
–––
RD = 13Ω,See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
4200 –––
VGS = 0V
Coss
Output Capacitance
–––
870
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
350
–––
pF
ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
5.0
13
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ I
SD ≤ 20A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting T
J = 25°C, L =4.8mH
RG = 25Ω, IAS = 20A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.8
V
TJ = 25°C, IS = 20A, VGS = 0V
„
trr
Reverse Recovery Time
–––
570
860
ns
TJ = 25°C, IF = 20A
Qrr
Reverse RecoverCharge
–––
5.7
8.6
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
20
80
A


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