전자부품 데이터시트 검색엔진 |
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IRFPS37N50 데이터시트(PDF) 1 Page - International Rectifier |
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IRFPS37N50 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A IDM Pulsed Drain Current 144 PD @TC = 25°C Power Dissipation 446 W Linear Derating Factor 3.6 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C SMPS MOSFET HEXFET® Power MOSFET Absolute Maximum Ratings l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) VDSS RDS(on) max ID 500V 0.13 Ω 36A Typical SMPS Topologies l Full Bridge Converters l Power Factor Correction Boost Notes through
are on page 8 IRFPS37N50A www.irf.com 1 12/14/99 SUPER-247 PD- 91822C |
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