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IRFPS43N50 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFPS43N50
상세설명  Power MOSFET(Vdss=500V, Rds(on)typ.=0.078ohm, Id=47A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFPS43N50 데이터시트(HTML) 2 Page - International Rectifier

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IRFPS43N50K
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 47A, VGS = 0V
„
trr
Reverse Recovery Time
–––
620
940
ns
TJ = 25°C, IF = 47A
Qrr
Reverse RecoveryCharge
–––
14
21
µC
di/dt = 100A/µs
„
IRRM
Reverse RecoveryCurrent
–––
38
–––
A
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
23
–––
–––
SVDS = 50V, ID = 28A
Qg
Total Gate Charge
–––
–––
350
ID = 47A
Qgs
Gate-to-Source Charge
–––
–––
85
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
180
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
25
–––
VDD = 250V
tr
Rise Time
–––
140
–––
ID = 47A
td(off)
Turn-Off Delay Time
–––
55
–––
RG = 1.0Ω
tf
Fall Time
–––
74
–––
VGS = 10V,See Fig. 10
„
Ciss
Input Capacitance
–––
8310 –––
VGS = 0V
Coss
Output Capacitance
–––
960
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
120
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
––– 10170 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
240
–––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
440
–––
VGS = 0V, VDS = 0V to 400V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
S
D
G
Diode Characteristics
47
190
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.60
–––
V/°C
Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.078 0.090
VGS = 10V, ID = 28A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
–––
–––
50
µA
VDS = 500V, VGS = 0V
–––
–––
250
µA
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ƒ I
SD ≤ 47A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C.
Notes:
‚ Starting T
J = 25°C, L = 0.82mH, RG = 25Ω,
IAS = 47A (See Figure 12a).
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.


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