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IRFR3910 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFR3910
상세설명  Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFR3910 데이터시트(HTML) 2 Page - International Rectifier

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IRFR/U3910
2
www.irf.com
Parameter
Min.
Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
Reference to 25°C, ID = 1mA
–––
––– 0.115
VGS = 10V, ID = 10A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
6.4
–––
–––
S
VDS = 50V, ID = 9.0A
†
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
Qg
Total Gate Charge
–––
–––
44
ID = 9.0A
Qgs
Gate-to-Source Charge
–––
–––
6.2
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
21
VGS = 10V, See Fig. 6 and 13
„†
td(on)
Turn-On Delay Time
–––
6.4
–––
VDD = 50V
tr
Rise Time
–––
27
–––
ns
ID = 9.0A
td(off)
Turn-Off Delay Time
–––
37
–––
RG = 12Ω
tf
Fall Time
–––
25
–––
RD = 5.5Ω, See Fig. 10
„†
Between lead,
6mm (0.25in.)
from package
and center of die contact
…
Ciss
Input Capacitance
–––
640
–––
VGS = 0V
Coss
Output Capacitance
–––
160
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
88
–––
ƒ = 1.0MHz, See Fig. 5
†
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
S
D
G
LS
Internal Source Inductance
–––
7.5
–––
RDS(on)
Static Drain-to-Source On-Resistance
LD
Internal Drain Inductance
–––
4.5
–––
IDSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
†
–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 9.0A, VGS = 0V
„
trr
Reverse Recovery Time
–––
130
190
ns
TJ = 25°C, IF = 9.0A
Qrr
Reverse RecoveryCharge
–––
650
970
nC
di/dt = 100A/µs
„†
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
16
60
Notes:
‚ V
DD = 25V, starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = 9.0A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
ƒ I
SD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
† Uses IRF530N data and test conditions
… This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
„ Pulse width ≤ 300µs; duty cycle ≤ 2%


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