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IRFU9024N 데이터시트(Datasheet) 1 Page - International Rectifier

부품명 IRFU9024N
상세내용  Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
PDF  10 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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IRFR/U9024N
PRELIMINARY
HEXFET® Power MOSFET
6/26/97
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
3.3
RθJA
Junction-to-Ambient (PCB mount)**
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
D - P a k
TO - 2 52 A A
I- P a k
TO - 251A A
l Ultra Low On-Resistance
l P-Channel
l Surface Mount (IRFR9024N)
l Straight Lead (IRFU9024N)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
Description
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
-11
ID @ TC = 100°C
Continuous Drain Current, VGS @ -10V
-8
A
IDM
Pulsed Drain Current

-44
PD @TC = 25°C
Power Dissipation
38
W
Linear Derating Factor
0.30
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
62
mJ
IAR
Avalanche Current

-6.6
A
EAR
Repetitive Avalanche Energy

3.8
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
-10
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 9.1506
VDSS = -55V
RDS(on) = 0.175Ω
ID = -11A
S
D
G




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