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SMS3401A 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMS3401A 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 3 page Elektronische Bauelemente SMS3401A -4.2A , -30V , RDS(ON) 60 mΩ Ω Ω Ω P-Channel Enhancement Mode Power MOSFET 27-Jun-2014 Rev.A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS -30 - - V VGS=0, ID= -250µA Gate-Threshold Voltage VGS(th) -0.7 - -1.3 V VDS=VGS, ID= -250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V, VDS=0 Drain-Source Leakage Current IDSS - - -1 µA VDS= -24V, VGS=0 Forward Tranconductance 1 gfs 7 - - S VDS= -5V, ID= -5A - - 60 VGS= -10V, ID=-4.2A - - 70 VGS= -4.5V, ID= -4A Static Drain-Source On-Resistance 1 RDS(ON) - - 85 m VGS= -2.5V, ID= -1A Dynamic Parameters 2 Input Capacitance Ciss - 1050 - Output Capacitance Coss - 127 - Reverse Transfer Capacitance Crss - 85 - pF VGS =0 VDS= -15V f =1.0MHz Turn-on Delay Time Td(on) - 6.5 - Rise Time Tr - 3.5 - Turn-off Delay Time Td(off) - 40 - Fall Time Tf - 13 - nS VGS= -10V VDS= -15V RGEN=6 RL=3.6 Source-Drain Diode Forward Voltage 1 VSD - - -1 V VGS =0, IS= -1A Note: 1. Pulse Test : Pulse width≦300µs, duty cycle≦2%. 2. These parameters have no way to verify. |
유사한 부품 번호 - SMS3401A_15 |
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유사한 설명 - SMS3401A_15 |
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