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IRFZ44 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFZ44
상세설명  Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFZ44 데이터시트(HTML) 1 Page - International Rectifier

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IRFZ44N
HEXFET® Power MOSFET
01/03/01
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.5
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
www.irf.com
1
VDSS = 55V
RDS(on) = 17.5mΩ
ID = 49A
S
D
G
TO-220AB
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts.
The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
PD - 94053
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
49
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
35
A
IDM
Pulsed Drain Current

160
PD @TC = 25°C
Power Dissipation
94
W
Linear Derating Factor
0.63
W/°C
VGS
Gate-to-Source Voltage
± 20
V
IAR
Avalanche Current

25
A
EAR
Repetitive Avalanche Energy

9.4
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)


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