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IRFZ44VZ 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFZ44VZ
상세설명  Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFZ44VZ 데이터시트(HTML) 1 Page - International Rectifier

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8/25/03
www.irf.com
1
AUTOMOTIVE MOSFET
PD - 94755
HEXFET® Power MOSFET
VDSS = 60V
RDS(on) = 12mΩ
ID = 57A
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
IRFZ44VZ
IRFZ44VZS
IRFZ44VZL
D2Pak
IRFZ44VZS
TO-220AB
IRFZ44VZ
TO-262
IRFZ44VZL
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.64
°C/W
RθCS
Case-to-Sink, Flat Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
92
0.61
± 20
Max.
57
40
230
110
73
See Fig.12a, 12b, 15, 16


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