IRFZ48V datasheet(1/8 Pages) IRF | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)

부품명	IRFZ48V

부품 상세설명	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)

Download	8 Pages

Scroll/Zoom	100%

제조업체	IRF [International Rectifier]

홈페이지	http://www.irf.com

Logo

1 / 8 page

IRFZ48V

HEXFET® Power MOSFET

3/25/01

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

72

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

51

A

IDM

Pulsed Drain Current

290

PD @TC = 25°C

Power Dissipation

150

W

Linear Derating Factor

1.0

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

166

mJ

IAR

Avalanche Current

72

A

EAR

Repetitive Avalanche Energy

15

mJ

dv/dt

Peak Diode Recovery dv/dt

5.3

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.0

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

Thermal Resistance

www.irf.com

1

VDSS = 60V

RDS(on) = 12mΩ

ID = 72A

S

D

G

TO-220AB

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Optimized for SMPS Applications

Description

PD - 93959A

유사한 부품 번호 - IRFZ48V

제조업체	부품명	데이터시트	부품 상세설명
Kersemi Electronic Co.,...	IRFZ48V	2Mb / 8P	HEXFET Power MOSFET
Inchange Semiconductor ...	IRFZ48V	338Kb / 2P	N-Channel MOSFET Transistor
International Rectifier	IRFZ48VPBF	223Kb / 8P	Advanced Process Technology
Kersemi Electronic Co.,...	IRFZ48VPBF	3Mb / 8P	Advanced Process Technology
International Rectifier	IRFZ48VPBF	223Kb / 8P	ADVANCED PROCESS TECHNOLOGY

More results

유사한 설명 - IRFZ48V

제조업체	부품명	데이터시트	부품 상세설명
International Rectifier	IRFZ48VS	282Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
	IRFZ44VZ	298Kb / 12P	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)
	IRF1010E	195Kb / 8P	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
	IRF1010ES	123Kb / 10P	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??
	IRFIZ48V	93Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=39A)
	IRL3103S	125Kb / 10P	Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)
	IRF7467	114Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=11A)
	IRF3708	138Kb / 10P	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A)
	IRFP4710	103Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A)
	IRFD9014	177Kb / 6P	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.1A)

More results

IRFZ48V 데이터시트(PDF) 1 Page - International Rectifier

IRFZ48V 데이터시트(HTML) 1 Page - International Rectifier

유사한 부품 번호 - IRFZ48V

유사한 설명 - IRFZ48V

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL