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SSG4934N 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSG4934N
상세설명  Dual N-Channel Mode Power MOSFET
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

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SSG4934N
8.9 A, 30 V, RDS(ON) 58 mΩ
Dual N-Channel Mode Power MOSFET
Elektronische Bauelemente
09-May-2012 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
A
H
B
M
D
C
J
K
F
L
E
N
G
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOP-8
2.5K
13 inch
MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
1
TA = 25°C
ID
8.9
A
TA = 70°C
7.3
A
Pulsed Drain Current
2
IDM
30
A
Continuous Source Current (Diode Conduction)
1
IS
2.6
A
Total Power Dissipation
1
TA = 25°C
PD
2.1
W
TA = 70°C
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.)
1
t ≦ 10 sec
RθJA
62.5
°C / W
Steady State
110
°C / W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
SOP-8
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
5.80
6.20
H
0.35
0.49
B
4.80
5.00
J
0.375 REF.
C
3.80
4.00
K
45°
D
L
1.35
1.75
E
0.40
0.90
M
0.10
0.25
F
0.19
0.25
N
0.25 REF.
G
1.27 TYP.
D
D
S
S
G
G
D
D


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