SSP7438N_15 datasheet(2/2 Pages) SECOS

부품명	SSP7438N

상세설명	N-Channel Enhancement MOSFET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Elektronische Bauelemente

SSP7438N

22 A, 30 V, RDS(ON) 7.5 m

N-Channel Enhancement MOSFET

18-Sep-2013 Rev. B

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Gate-Threshold Voltage

VGS(th)

1

-

V

VDS = VGS, ID = 250μA

Gate-Body Leakage

IGSS

-

±

100

nA

VDS =0, VGS=20V

-

1

VDS =24V, VGS=0

Zero Gate Voltage Drain Current

IDSS

-

5

μA

VDS =24V, VGS=0,TJ=55°C

On-State Drain Current

1

ID(ON)

40

-

A

VDS =5V, VGS= 10V

-

7.5

VGS=10V, ID =2A

Drain-Source On-Resistance

1

RDS(ON)

-

11.5

mΩ

VGS=4.5V, ID =2A

Forward Transconductance

1

gFS

-

40

-

S

VDS=15V,,ID =2A

Diode Forward Voltage

VSD

-

0.7

-

V

IS=2A, VGS=0

Dynamic

2

Total Gate Charge

Qg

-

16

-

Gate-Source Charge

Qgs

-

5

-

Gate-Drain Charge

Qgd

-

6

-

nC

ID=10A

VDS=15V

VGS=4.5V

Turn-On Delay Time

Td(ON)

-

5

-

Rise Time

Tr

-

4

-

Turn-Off Delay Time

Td(OFF)

-

23

-

Fall Time

Tf

-

9

-

nS

ID=1A,

VDD=15V

VGEN=10V

RL=6Ω

Notes

1.

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.

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