SSP7462N_15 datasheet(2/2 Pages) SECOS

부품명	SSP7462N

상세설명	N-Channel Enhancement MOSFET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Elektronische Bauelemente

SSP7462N

13 A, 60 V, RDS(ON) 22 m

N-Channel Enhancement MOSFET

18-Sep-2013 Rev. B

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Static

Gate-Threshold Voltage

VGS(th)

1

-

V

VDS = VGS, ID = 250μA

Gate-Body Leakage

IGSS

-

100

nA

VDS = 0V, VGS= 12V

-

1

VDS = 48V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-

5

μA

VDS = 48V, VGS= 0V, TJ=55°C

On-State Drain Current

1

ID(ON)

40

-

A

VDS = 5V, VGS= 10V

-

22

VGS= 10V, ID = 6A

Drain-Source On-Resistance

1

RDS(ON)

-

26

mΩ

VGS= 4.5V, ID = 5A

Forward Transconductance

1

gFS

-

40

-

S

VDS= 15V,,ID = 6A

Diode Forward Voltage

VSD

-

0.7

-

V

IS= 2.3A, VGS= 0V

Dynamic

2

Total Gate Charge

Qg

-

15

-

Gate-Source Charge

Qgs

-

3

-

Gate-Drain Charge

Qgd

-

5

-

nC

ID= 6A

VDS= 15V

VGS= 4.5V

Turn-On Delay Time

Td(ON)

-

15

-

Rise Time

Tr

-

10

-

Turn-Off Delay Time

Td(OFF)

-

54

-

Fall Time

Tf

-

26

-

nS

ID= 1A, VDD= 15V

VGEN= 10V

RL= 6Ω

Notes

1.

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

2.

Guaranteed by design, not subject to production testing.

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