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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRHNA8160 데이터시트(PDF) 3 Page - International Rectifier |
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IRHNA8160 데이터시트(HTML) 3 Page - International Rectifier |
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3 / 4 page  Table 2. High Dose Rate 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter Min. Typ Max. Min. Typ. Max. Units Test Conditions VDSS Drain-to-Source Voltage — — 80 — — 80 V Applied drain-to-source voltage during gamma-dot IPP — 140 — — 140 — A Peak radiation induced photo-current di/dt — — 800 — — 160 A/µsec Rate of rise of photo-current L1 0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects LET (Si) Fluence Range VDS Bias VGS Bias Parameter Typ. Units Ion (MeV/mg/cm2) (ions/cm2)( µm) (V) (V) BVDSS 100 V Ni 28 1 x 105 ~41 100 -5 Radiation Performance of Rad Hard HEXFETs IRHNA7160, IRHNA8160 Devices Radiation Characteristics Table 1. Low Dose Rate IRHNA7160 IRHNA8160 Parameter 100K Rads (Si) 1000K Rads (Si) Units Test Conditions min. max. min. max. BVDSS Drain-to-Source Breakdown Voltage 100 — 100 — V VGS = 0V, ID = 1.0 mA VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0 mA IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 25 — 50 µAVDS = 0.8 x Max Rating, VGS = 0V RDS(on)1 Static Drain-to-Source — 0.045 — 0.062 Ω VGS = 12V, ID =32.5A On-State Resistance One VSD Diode Forward Voltage — 1.8 — 1.8 V TC = 25°C, IS = 51A,VGS = 0V International Rectifier Radiation Hardened HEX- FETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHNA7160. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct com- parison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are speci- fied in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. To Order Next Data Sheet Index Previous Datasheet |
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