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IRHNA9064 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRHNA9064
상세설명  TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48A)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRHNA9064 데이터시트(HTML) 1 Page - International Rectifier

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Product Summary
Part Number
BVDSS
RDS(on)
ID
IRHNA9064
-60V
0.055
-48A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n IdenticalPre-andPost-ElectricalTestConditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n SimpleDriveRequirements
n Ease of Paralleling
n HermeticallySealed
n Surface Mount
n Light-Weight
P-CHANNEL
RADHARD
Provisional Data Sheet No. PD-9.1447
-60Volt,
0.055Ω
0.055Ω
0.055Ω
0.055Ω
0.055Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of sur-
viving transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the P-Chan-
nel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the high-
est quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifi-
ers and high-energy pulse circuits in space and weapons
environments.
REPETITIVE AVALANCHE AND dv/dt RATED
IRHNA9064
HEXFET® TRANSISTOR
Absolute Maximum Ratings
Parameter
IRHNA9064
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
-48
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
-30
IDM
Pulsed Drain Current

-192
PD @ TC = 25°C
Max. Power Dissipation
300
W
Linear Derating Factor
2.4
W/K
…
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
500
mJ
IAR
Avalanche Current

-48
A
EAR
Repetitive Avalanche Energy

30
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
-5.5
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
300 (For 5 sec)
Weight
3.3 (typical)
g
Pre-Radiation
oC
A
Next Data Sheet
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