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IRHNA9064 데이터시트(PDF) 1 Page - International Rectifier |
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IRHNA9064 데이터시트(HTML) 1 Page - International Rectifier |
1 / 4 page Product Summary Part Number BVDSS RDS(on) ID IRHNA9064 -60V 0.055 Ω -48A Features: n Radiation Hardened up to 1 x 105 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n IdenticalPre-andPost-ElectricalTestConditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n SimpleDriveRequirements n Ease of Paralleling n HermeticallySealed n Surface Mount n Light-Weight P-CHANNEL RADHARD Provisional Data Sheet No. PD-9.1447 -60Volt, 0.055Ω 0.055Ω 0.055Ω 0.055Ω 0.055Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radia- tion test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of sur- viving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few micro- seconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demon- strated virtual immunity to SEE failure. Since the P-Chan- nel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the high- est quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifi- ers and high-energy pulse circuits in space and weapons environments. REPETITIVE AVALANCHE AND dv/dt RATED IRHNA9064 HEXFET® TRANSISTOR Absolute Maximum Ratings Parameter IRHNA9064 Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -48 ID @ VGS = -12V, TC = 100°C Continuous Drain Current -30 IDM Pulsed Drain Current -192 PD @ TC = 25°C Max. Power Dissipation 300 W Linear Derating Factor 2.4 W/K VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 500 mJ IAR Avalanche Current -48 A EAR Repetitive Avalanche Energy 30 mJ dv/dt Peak Diode Recovery dv/dt -5.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temperature 300 (For 5 sec) Weight 3.3 (typical) g Pre-Radiation oC A Next Data Sheet Index Previous Datasheet To Order |
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