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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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L6207 데이터시트(PDF) 11 Page - STMicroelectronics |
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L6207 데이터시트(HTML) 11 Page - STMicroelectronics |
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11 / 53 page  11/53 AN1762 APPLICATION NOTE Resistor R4 is added to reduce the maximum current in the external components and to reduce the slew rate of the rising and falling edges of the voltage at the CP pin, in order to minimize interferences with the rest of the circuit. For the same reason care must be taken in realizing the PCB layout of R4, C5, D1, D2 connections (see also the Layout Considerations section). Recommended values for the charge pump circuitry are: D1, D2 : 1N4148 R4 : 100 Ω (1/8 W) C5 : 10nF 100V ceramic C8 : 220nF 25V ceramic Due to the high charge pump frequency, fast diodes are required. Connecting the cold side of the bulk capacitor (C8) to VS instead of GND the average current in the external diodes during operation is less than 10 mA (with R4 = 100 Ω); at startup (when VS is provided to the IC) is less than 200 mA while the reverse voltage is about 10 V in all conditions. 1N4148 diodes withstand about 200 mA DC (1 A peak), and the maximum reverse voltage is 75 V, so they should fit for the majority of applications. 3.7 Sharing the Charge Pump Circuitry If more than one device is used in the application, it's possible to use the charge pump from one L6205, L6206 or L6207 to supply the VBOOT pins of several ICs. The unused CP pins on the slaved devices are left uncon- nected, as shown in Figure 10. A 100nF capacitor (C8) should be connected to the VBOOT pin of each device. Supply voltage pins (VS) of the devices sharing the charge pump must be connected together. The higher the number of devices sharing the same charge pump, the lower will be the differential voltage avail- able for gate drive (VBOOT - VS), causing a higher RDS(ON) for the high side DMOS, so higher dissipating power. In this case it's recommended to omit the resistor on the CP pin, obtaining a higher current capability of the charge pump circuitry. Better performance can also be obtained using a 33nF capacitor for C5 and using schottky diodes (for example BAT47 are recommended). Sharing the same charge pump circuitry for more than 3÷4 devices is not recommended, since it will reduce the VBOOT voltage increasing the high-side MOS on-resistance and thus power dissipation. Figure 10. Sharing the charge pump circuitry. VSA VSB VBOOT CP C18 = 100 nF To High-Side Gate Drivers VSA VSB VBOOT C8 = 100nF To High-Side Gate Drivers To other Devices CP L6205, L6206, L6207 L6205, L6206, L6207 D1 = BAT47 D2 = BAT47 C5 = 33nF |
유사한 부품 번호 - L6207 |
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유사한 설명 - L6207 |
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