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E35A37VBS ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - KEC(Korea Electronics)

๋ถ€ํ’ˆ๋ช… E35A37VBS
์ƒ์„ธ๋‚ด์šฉ  STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)
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์ œ์กฐ์‚ฌ  KEC [KEC(Korea Electronics)]
ํ™ˆํŽ˜์ด์ง€  http://www.keccorp.com
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E35A37VBS ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - KEC(Korea Electronics)

   
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2002. 1. 30
1/1
SEMICONDUCTOR
TECHNICAL DATA
E35A37VBS, E35A37VBR
STACK SILICON DIFFUSED DIODE
Revision No : 1
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=35A.
Zener Voltage : 37V(Typ.)
POLARITY
E35A37VBS (+ Type)
E35A37VBR (- Type)
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
B-PF
ฮฆ11.5 MAX
ฮฆ12.75+0.09-0.00
ฮฆ1.3 0.04
4.2 0.2
8.0 0.2
TYP 0.5
ฮฆ10.0 0.2
0.4 0.1
x45
0.2+0.1
28.35 0.5
A
8.5 MAX
H
B
C
D
E
F
G
H
I
J
K
F
E I
D
G
B
J
K
A
+_
+_
+_
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IFM=100A
-
-
1.15
V
Zener Voltage
VZ
IZ=10mA
34
37
40
V
Reverse Current
IR
VR=32V
-
-
10
A
Transient Thermal Resistance
VF
IFM=100A, IM=100mA, Pw=100mS
-
-
70
mV
Breakdown Voltage
Vbr
Irsm=35A, Pw=10mS
-
-
55
V
Temperature Coefficient
T
IZ=10mA
-
27
-
mV/
Reverse Leakage Current Under
High Temperature
HIR
Ta=150 , VR=32V
-
-
100
A
Temperature Resistance
Rth
DC total junction to case
-
-
0.8
/W
CHARACTERISTIC
SYMBOL
RATING
UNIT
Average Forward Current
IF(AV)
35
A
Peak 1 Cycle Surge Current
IFSM
300 (60Hz)
A
Repetitive Peak
Reverse Surge Current
(Pulse width=10mS)
IRSM
35
A
Transient Peak Reverse
Voltage
VRSM
34
V
Peak Reverse Voltage
VRM
32
V
Junction Temperature
Tj
-40 215
Storage Temperature Range
Tstg
-40 215


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