2SD1664_15 datasheet(1/1 Pages) WINNERJOIN

부품명	2SD1664

상세설명	NPN TRANSISTOR

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ELECTRONIC

CO.,LTD

2SD1664 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

0.5

W (Tamb=25

℃)

Collector current

ICM:

1

A

Collector-base voltage

V(BR)CBO:

40

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=

50µA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=

1mA, IB=0

32

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50µA, IC=0

5

V

Collector cut-off current

ICBO

VCB=20V, IE=0

0.5

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.5

µA

DC current gain

hFE(1)

VCE=3V, IC=0.1A

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

0.4

V

Transition frequency

fT

VCE=5V, IC=50mA , f=1MHz

150

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

15

pF

CLASSIFICATION OF hFE(1)

Rank

P

Q

R

Range

82-180

120-270

180-390

Marking

DAP

DAQ

DAR

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

2SD1664

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