2SJ648_15 datasheet(3/8 Pages) RENESAS

부품명	2SJ648

상세설명	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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MOS FIELD EFFECT TRANSISTOR

2SJ648

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No. D16597EJ2V0DS00 (2nd edition)

Date Published November 2004 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2003

PACKAGE DRAWING (Unit: mm)

0.3

2

0.2

+0.1

–0

0.5

1: Source

2: Gate

3: Drain

0.5

1.0

1.6 ± 0.1

3

1

0.6

0.75 ± 0.05

0 to 0.1

0.15

+0.1

–0.05

+0.1

–0

DESCRIPTION

The 2SJ648 is a switching device which can be driven directly by a

2.5 V power source.

The 2SJ648 features a low on-state resistance and excellent

switching characteristics, and is suitable for

applications such as

power switch of portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

RDS(on)1 = 1.45

Ω MAX. (VGS = −4.5 V, ID = −0.2 A)

RDS(on)2 = 1.55

Ω MAX. (VGS = −4.0 V, ID = −0.2 A)

RDS(on)3 = 2.98

Ω MAX. (VGS = −2.5 V, ID = −0.15 A)

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SJ648

SC-75 (USM)

Marking: H1

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−20

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m12

V

Drain Current (DC)

ID(DC)

m0.4

A

Drain Current (pulse)

Note1

ID(pulse)

m1.6

A

Total Power Dissipation

Note2

PT

200

mW

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 300 mm

2 x 0.64 mm.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Caution

This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

VESD = ±100 V TYP. (C = 200 pF, R = 0

Ω, Single pulse)

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

유사한 부품 번호 - 2SJ648_15

제조업체	부품명	데이터시트	상세설명
NEC	2SJ648	135Kb / 6P	MOS FIELD EFFECT TRANSISTOR
Renesas Technology Corp	2SJ648	268Kb / 8P	MOS FIELD EFFECT TRANSISTOR 2003

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2SJ648 데이터시트(PDF) 3 Page - Renesas Technology Corp

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