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3 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. D16597EJ2V0DS00 (2nd edition) Date Published November 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2003 PACKAGE DRAWING (Unit: mm) 0.3 2 0.2 +0.1 –0 0.5 1: Source 2: Gate 3: Drain 0.5 1.0 1.6 ± 0.1 3 1 0.6 0.75 ± 0.05 0 to 0.1 0.15 +0.1 –0.05 +0.1 –0 DESCRIPTION The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) ORDERING INFORMATION PART NUMBER PACKAGE 2SJ648 SC-75 (USM) Marking: H1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −20 V Gate to Source Voltage (VDS = 0 V) VGSS m12 V Drain Current (DC) ID(DC) m0.4 A Drain Current (pulse) Note1 ID(pulse) m1.6 A Total Power Dissipation Note2 PT 200 mW Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 300 mm 2 x 0.64 mm. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain |
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