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LDTB114ELT1G 데이터시트(PDF) 1 Page - Leshan Radio Company

부품명 LDTB114ELT1G
상세설명  Bias Resistor Transistor
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제조업체  LRC [Leshan Radio Company]
홈페이지  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

LDTB114ELT1G 데이터시트(HTML) 1 Page - Leshan Radio Company

  LDTB114ELT1G_15 Datasheet HTML 1Page - Leshan Radio Company LDTB114ELT1G_15 Datasheet HTML 2Page - Leshan Radio Company LDTB114ELT1G_15 Datasheet HTML 3Page - Leshan Radio Company  
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background image
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
F14
10
10
3000/Tape & Reel
LESHAN RADIO COMPANY, LTD.
10000/Tape & Reel
We declare that the material of product compliance with
RoHS requirements.
S-LDTB114ELT1G
Inverter, Interface, Driver
Features
Applications
LDTB114ELT1G
S-LDTB114ELT3G
F14
10
10
Absolute maximum ratings (Ta=25
°C)
1
2
3
SOT-23
3
COLLECTOR
2
EMITTER
1
BASE
R1
R2
Limits
Parameter
Symbol
Unit
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
VCC
−50
−40 to +10
−500
200
150
−55 to +150
V
VIN
V
mA
mW
IC
PD
Tj
Tstg
C
C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
R1
GI
R2/R1
fT
Min.
−3
7
56
0.8
−0.1
10
1
200
−0.5
−0.3
−0.88
−0.5
13
1.2
V
VCC=
−5V, IO= −100µA
VO=
−0.3V, IO= −10mA
IO/II=
−50mA/−2.5mA
VI=
−5V
VCC=
−50V, VI=0V
VO=
−5V, IO= −50mA
VCE=
−10V, IE=50mA, f=100MHz
V
mA
µA
k
−−
MHz
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Rev.O 1/3
LDTB114ELT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-LDTB114ELT1G
LDTB114ELT3G


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