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KTA1045D ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - KEC(Korea Electronics)

๋ถ€ํ’ˆ๋ช… KTA1045D
์ƒ์„ธ๋‚ด์šฉ  EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)
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์ œ์กฐ์‚ฌ  KEC [KEC(Korea Electronics)]
ํ™ˆํŽ˜์ด์ง€  http://www.keccorp.com
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KTA1045D ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - KEC(Korea Electronics)

   
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2003. 3. 27
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1045D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 5
LOW FREQUENCY POWER AMP,
MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES
High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE.
Complementary to KTC2025D/L
MAXIMUM RATING (Ta=25 )
DPAK
DIM
MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10
M
0.90 0.1
O
A
C
I
J
H
F
F
P
L
12
3
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10
P
0.95 MAX
Q
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
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+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
(Note) : hFE(1) Classification
Y:100 200, GR:160 320
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-120
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1
A
ICP
-2
Collector Power
Dissipation
Ta=25
PC
1.0
W
Tc=25
8
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut of Current
ICBO
VCB=-50V, IE=0
-
-
-1
A
Emitter Cut of Current
IEBO
VEB=-4V, IC=0
-
-
-1
A
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10 A, IE=0
-120
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-120
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10 A, IC=0
-5
-
-
V
DC Current Gain
hFE(1) Note
VCE=-5V, IC=-50mA
100
-
320
hFE(2)
VCE=-5V, IC=-500mA
20
-
-
Gain Bandwidth Product
fT
VCE=-10V, IC=-50mA
-
110
-
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
30
-
pF
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-500mA, IB=-50mA
-
-0.15
-0.4
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-500mA, IB=-50mA
-
-0.85
-1.2
V
Switching Time
Turn-on Time
ton
-
80
-
nS
Turn-off Time
toff
-
100
-
Storage Time
tstg
-
600
-
IB1
B2
I
20ยตsec
1uF
1uF
24โ„ฆ
1โ„ฆ
100โ„ฆ
CE
V =-12V
2V
-12V
I =10I =-10I =500mA
C
B1
B2
DIM
MILLIMETERS
IPAK
H
F
F
C
A
P
L
I
J
123
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K
2.0 0.2
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
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