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BCW66H 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 BCW66H
상세설명  45V NPN SMALL SIGNAL TRANSISTOR IN SOT23
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BCW66H 데이터시트(HTML) 2 Page - Diodes Incorporated

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BCW66H
Document number: DS33003 Rev. 5 - 2
2 of 5
www.diodes.com
April 2013
© Diodes Incorporated
BCW66H
A Product Line of
Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
800
mA
Peak Pulse Current
ICM
1000
mA
Base Current
IB
100
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
310
mW
(Note 7)
350
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
403
C/W
(Note 7)
357
Thermal Resistance, Junction to Leads
(Note 8)
RθJL
350
C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
C
Notes:
6. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15mm X 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
0
255075
100
125
150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
100µ
1m
10m 100m
1
10
100
1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Pulse Width (s)
10m
100m
1
10
100
1k
0.1
1
10
Single Pulse. T
amb=25°C
Pulse Power Dissipation
Pulse Width (s)


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