VS-ST1230C..K Series

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Vishay Semiconductors

Revision: 16-Dec-13

3

Document Number: 94395

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

typ.

Max.

Maximum peak gate power

≤ 5 ms

16

W

Maximum average gate power

3

Maximum peak positive gate current

≤ 5 ms

3.0

A

Maximum peak positive gate voltage

20

V

Maximum peak negative gate voltage

5.0

DC gate current required to trigger

Maximum required gate trigger/

current/voltage are the lowest

value which will trigger all units

12 V anode to cathode applied

200

-

mA

100

200

50

-

DC gate voltage required to trigger

1.4

-

V

1.1

3.0

0.9

-

DC gate current not to trigger

Maximum gate current/

voltage not to trigger is the

maximum value which will not

anode to cathode applied

10

mA

DC gate voltage not to trigger

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction

temperature range

-40 to 125

°C

Maximum storage temperature range

-40 to 150

Maximum thermal resistance,

junction to heatsink

DC operation single side cooled

0.042

K/W

DC operation double side cooled

0.021

Maximum thermal resistance,

case to heatsink

DC operation single side cooled

0.006

DC operation double side cooled

0.003

Mounting force, ± 10 %

24 500

(2500)

N

(kg)

Approximate weight

425

g

Case style

See dimensions - link at the end of datasheet

A-24 (K-PUK)

CONDUCTION ANGLE

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION

TEST CONDITIONS

UNITS

SINGLE SIDE

DOUBLE SIDE

SINGLE SIDE

DOUBLE SIDE

180°

0.003

0.003

0.002

0.002

K/W

120°

0.004

0.004

0.004

0.004

90°

0.005

0.005

0.005

0.005

60°

0.007

0.007

0.007

0.007

30°

0.012

0.012

0.012

0.012