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TSC742CZC0 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC742CZC0 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page TSC742 Taiwan Semiconductor Document Number: DS_P0000179 1 Version: B15 High Voltage Fast-Switching NPN Power Transistor FEATURES ● High Voltage Capability ● Fast Switching Speed ● Pb-free plating ● RoHS compliant APPLICATION ● Electronic Ballast ● Switch mode power supply KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT BVCEO 420 V BVCBO 1050 V IC 5 A VCE(SAT) IC=1A, IB=0.2A 0.5 V TO-220 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage VCBO 1050 V Collector-Emitter Voltage @ VBE=0V VCES 420 V Emitter-Base Voltage VEBO 15 V Collector Current IC 5 A Collector Peak Current (tp <5ms) ICM 8 A Base Current IB 2 A Base Peak Current (tp <5ms) IBM 4 A Power Total Dissipation @ TA=25ºC PDTOT 70 W Maximum Operating Junction Temperature TJ +150 oC Storage Temperature Range TSTG -55 to +150 oC THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.8 oC/W Junction to Ambient Thermal Resistance RӨJA 62.5 oC/W |
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