SMB1N-375V-02 datasheet(1/4 Pages) ROITHNER

부품명	SMB1N-375V-02

상세설명	uv high power led

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SMB1N-375V-02

v 1.0 08.09.2014

Description

SMB1N-375V-02 is a surface mount AlInGaN High Power LED with a typical peak wavelength of 375 nm

and radiation of 560 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free

solderable), copper heat sink, and molded with silicone resin.

Maximum Ratings (T

CASE=25°C)

Parameter

Symbol

Values

Min.

Max.

Unit

Power Dissipation

PD

2200

mW

Forward Current

IF

500

mA

Pulse Forward Current *

1

IFP

700

mA

Reverse Voltage

VF

not designed for reverse operation

V

Thermal Resistance

RTHJA

10

K/W

Junction Temperature

TJ

120

°C

Operating Temperature

TCASE

- 40

+ 100

°C

Storage Temperature

TSTG

- 40

+ 100

°C

Lead Solder Temperature *

2

TSLD

+ 250

°C

*

1 duty=1%, pulse width = 10 µs

*

2 must be completed within 5 seconds

Electro-Optical Characteristics (T

CASE=25°C)

*

1 measured by S3584-08

Parameter

Symbol Conditions

Values

Min.

Typ.

Max.

Unit

Peak Wavelength

λP

IF=500mA

370

375

380

nm

Half Width

∆λ

IF=500mA

18

nm

Forward Voltage

VF

IF=500mA

3.5

4.5

V

VFP

IFP=700mA

3.6

Radiated Power *

1

PO

IF=500mA

560

mW

IFP=700mA

800

Viewing Angle

φ

IF=100mA

20

deg.

Rise Time

tR

IF=500mA

50

ns

Fall Time

tF

IF=500mA

55

ns

유사한 부품 번호 - SMB1N-375V-02

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SMB1N-375V-02 데이터시트(PDF) 1 Page - Roithner LaserTechnik GmbH

SMB1N-375V-02 데이터시트(HTML) 1 Page - Roithner LaserTechnik GmbH

유사한 부품 번호 - SMB1N-375V-02

유사한 설명 - SMB1N-375V-02

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