BCW67 SERIES

BCW68 SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BCW67 and BCW68

Series types are PNP Silicon Transistors manufactured

by the epitaxial planar process, epoxy molded in a

surface mount package, designed for general purpose

switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

BCW67

BCW68

UNITS

Collector-Base Voltage

VCBO

45

60

V

Collector-Emitter Voltage

VCEO

32

45

V

Emitter-Base Voltage

VEBO

5.0

V

Conitinuous Collector Current

IC

800

mA

Peak Collector Current

ICM

1.0

A

Continuous Base Current

IB

100

mA

Peak Base Current

IBM

200

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=Rated VCEO

20

nA

ICBO

VCB= Rated VCEO, TA=150°C

20

µA

IEBO

VEB=4.0V

20

nA

BVCBO

IC=10µA (BCW67)

45

V

BVCBO

IC=10µA (BCW68)

60

V

BVCEO

IC=10mA (BCW67)

32

V

BVCEO

IC=10mA (BCW68)

45

V

BVEBO

IE=10µA

5.0

V

VCE(SAT)

IC=100mA, IB=10mA

0.3

V

VCE(SAT)

IC=500mA, IB=50mA

0.7

V

VBE(SAT)

IC=100mA, IB=10mA

1.25

V

VBE(SAT)

IC=500mA, IB=50mA

2.0

V

fT

VCE=5.0V, IC=50mA, f=20MHz

200

MHz

Cc

VCB=10V, IE=0, f=1.0MHz

6.0

pF

Ce

VEB=0.5V, IC=0, f=1.0MHz

60

pF

BCW67A

BCW67B

BCW67C

BCW68F

BCW68G

BCW68H

MIN

MAX

MIN

MAX

MIN

MAX

hFE

VCE=10V, IC=100µA

35

50

80

hFE

VCE=1.0V, IC=10mA

75

120

180

hFE

VCE=1.0V, IC=100mA

100

250

160

400

250

630

hFE

VCE=2.0V, IC=500mA

35

60

100

SOT-23 CASE

R2 (20-November 2009)

www.centra lsemi.com