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AM52-0001SMB 데이터시트(PDF) 1 Page - Tyco Electronics |
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AM52-0001SMB 데이터시트(HTML) 1 Page - Tyco Electronics |
1 / 6 page Specifications Subject to Change Without Notice. M/A-COM Inc. 1 North America: Tel. (800) 366-2266 ♦ Asia/Pacific: Tel. +81 3 3226-8761 ♦ Europe: Tel. +44 (1344) 869-595 Fax (800) 618-8883 Fax +81 3 3226-8769 Fax +44 (1344) 300 020 Preliminary Release 1.2 W High Efficiency Power Amplifier 800 - 960 MHz AM52-0001 V1.00 Features • SOIC-8 Thermally Efficient Plastic Package • +30.8 dBm Typical Power Out • Greater than 50% Typical Power Added Efficiency • 21 dB typical Power Gain • Flexible External Output Matching Description M/A-COM’s AM52-0001 is a GaAs power amplifier in a thermally efficient low cost SOIC-8 plastic package. The AM52-0001 is designed for high efficiency 1.2 W output power and 21 dB of associated gain in the 800-960 MHz frequency band. The AM52-0001 is unconditionally stable in both small and large signal operation. It features flexible biasing for improved dynamic range and off-chip matching for improved efficiency and flexibility. The AM52-0001 is specifically designed for high efficiency final output power amplification in FM, GFSK and FSK type systems, such as AMPS, ETACS, NTACS, CT1, CDPD and ISM. M/A-COM's AM52-0001 is fabricated using a mature 0.5 micron gate length GaAs MESFET power process. The process features full passivation for increased performance and reliability. The AM52-0001 can be used with standard automated SMT assembly equipment (See M/A-COM application note M558). SOIC-8P .004 (.10) .050 (1.27) MS M B A C .010 (.25) -A- -C- -B- .010(.25) B CHAMFER .1497/.1574 (3.80/4.00) .2284/.2440 (5.80/6.20) .1890/.1968 (4.80/5.00) .013/.020 (8 PL) (.33/.51) .0532/.0688 (1.35/1.75) MM Ordering Information Part Number Package AM52-0001 SOIC-8 Lead Plastic AM52-0001TR Forward Tape and Reel * AM52-0001SMB Designer’s Kit * If specific reel size is required, consult factory for part number assignment. Electrical Specifications: V D1 = VD2 = 4.8V ±± 5%, T A = +25 °°C, Freq. = 824-849 MHz, V GG = VG2 = VG1 adjusted for 150 mA quiescent drain Current. Parameter Test Conditions Units Min. Typ. Max. Linear Gain Pin ≤ -20 dBm dB 29 Output Power Pin = 10 dBm dBm 30.8 Power Gain dB 21 Power Added Efficiency % 55 Second Harmonic dBc -30 Third Harmonic dBc -50 Noise Power1 dBm -92 Stability2 VSWR 10:1 Load Mismatch3 VSWR 10:1 Gate Current mA 5 Adjustable Power Control (APC) VD1 = 0 → 4.8V VD2 = 4.8 V dB 27 1. Noise power (30 KHz RBW), 45 MHz above TX Freq range, measured under rated output power conditions. 2. Parasitic Oscillation defined as any spurious output less than 60 dBc with respect to desired signal level. Measured with nominal Pin and an output VSWR of 10:1 any phase, VDD = 4.8 V. 3. No permanent degradation with nominal Pin and an output VSWR of 10:1 at any phase (360 ° rotation in 10 sec.) with V DD up to 6V. . |
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