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KSD13003ER 데이터시트(PDF) 2 Page - SemiHow Co.,Ltd. |
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KSD13003ER 데이터시트(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 5 page ◎ SEMIHOW REV.A0,July 2011 High Voltage Switch Mode Application • High Voltage, High Speed Switching • Suitable for Switching regulator, Inverters motor controls • 150℃ Max. Operating temperature • 8KV ESD proof at HBM (C=100㎊, R=1.5㏀) KSD13003ER/KSU13003ER CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Storage Temperature Max. Operating Junction Temperature V CBO V CEO V EBO I C I CP I B P C T STG T J 700 400 9 1.5 3 0.75 25 -65~150 150 V V V A A A W ℃ ℃ 1.5 Amperes NPN Silicon Power Transistor 25 Watts Absolute Maximum Ratings TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Base Breakdown Voltage V CBO I C=500μA, IE=0 700 V Collector-Emitter Breakdown Voltage V CEO I C=1mA, IB=0 400 V Emitter Cut-off Current I EBO V EB=9V,IC=0 10 ㎂ *DC Current Gain h FE1 h FE2 V CE=10V,IC=400mA V CE=10V,IC=1.5A 9 3 38 *Collector-Emitter Saturation Voltage V CE(sat) I C=0.5A,IB=0.1A I C=1A,IB=0.25A I C=1.5A,IB=0.5A 0.5 1.0 3.0 V V V *Base-Emitter Saturation Voltage V BE(sat) I C=0.5A,IB=0.1A I C=1A,IB=0.25A 1.0 1.2 V V Output Capacitance C ob V CB=10V, f=0.1MHz 21 ㎊ Current Gain Bandwidth Product f T V CE=10V,IC=0.1A 4 ㎒ Turn on Time t on Vcc=125V, Ic=2A I B1=0.2A, IB2= -0.2A R L=125Ω 1.1 ㎲ Storage Time t stg 4.0 ㎲ Fall Time t F 0.7 ㎲ Electrical Characteristics TC=25℃ unless otherwise noted * Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% TO-252 / TO-251 1. Emitter 2. Collector 3. Base hFE1 Classification R 15 ~ 25 O 20 ~ 30 Y 25 ~ 35 Note. S ER 1 3 0 0 3 YWW Z S SemiHow Symbol YWW Y; year code, WW; week code Z hFE1 Classification Package Mark information. D-PAK I-PAK 2 1 2 3 1 3 KSD13003ER KSU13003ER |
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