KF19N20D datasheet(2/6 Pages) KEC

부품명	KF19N20D

상세설명	N CHANNEL MOS FIELD EFFECT TRANSISTOR

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제조업체	KEC [KEC(Korea Electronics)]

홈페이지	http://www.keccorp.com

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2 / 6 page

2014. 12. 01

2/6

KF19N20D/I

Revision No : 2

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L = 1.54mH, IS=15A, VDD=50V, RG = 25Ω, Starting Tj = 25℃.

Note 3) IS ≤19A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj = 25℃.

Note 4) Pulse Test : Pulse width

≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

KF19N20

D

KF19N20

I

Marking

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

BVDSS

ID=250μ

A, VGS=0V

200

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS/ΔTj

ID=250μ

A, Referenced to 25

℃

-

0.23

-

V/

℃

Drain Cut-off Current

IDSS

VDS=200V, VGS=0V,

-

10

μA

Gate Threshold Voltage

Vth

VDS=VGS, ID=250μA

2.0

-

4.0

V

Gate Leakage Current

IGSS

VGS=±30V, VDS=0V

-

±100

nA

Drain-Source ON Resistance

RDS(ON)

VGS=10V, ID=7.5A

-

0.13

0.155

Ω

Dynamic

Total Gate Charge

Qg

VDS=160V, ID=19A

VGS=10V

(Note4,5)

-

21

-

nC

Gate-Source Charge

Qgs

-

4.3

-

Gate-Drain Charge

Qgd

-

8.2

-

Turn-on Delay time

td(on)

VDD=100V, ID=19A

RG=25Ω

(Note4,5)

-

20

-

ns

Turn-on Rise time

tr

-

22

-

Turn-off Delay time

td(off)

-

59

-

Turn-off Fall time

tf

-

17

-

Input Capacitance

Ciss

VDS=25V, VGS=0V, f=1.0MHz

-

855

-

pF

Output Capacitance

Coss

-

165

-

Reverse Transfer Capacitance

Crss

-

25

-

Source-Drain Diode Ratings

Continuous Source Current

IS

VGS<Vth

-

15

A

Pulsed Source Current

ISP

-

60

Diode Forward Voltage

VSD

IS=15A, VGS=0V

-

1.4

V

Reverse Recovery Time

trr

IS=19A, VGS=0V,

dIs/dt=100A/

㎲

-

145

-

ns

Reverse Recovery Charge

Qrr

-

0.8

-

μC

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