2012. 8. 22

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SEMICONDUCTOR

TECHNICAL DATA

KMA3D6N20SA

N-Ch Trench MOSFET

Revision No : 2

General Description

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment.

FEATURES

・V

・Drain-Source ON Resistance

・Super Hige Dense Cell Design

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

Note : Surface Mounted on FR4 Board, t

≤10sec.

PIN CONNECTION (TOP VIEW)

CHARACTERISTIC

SYMBOL

N-Ch

UNIT

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

Drain Current

DC

3.6

A

Pulsed

14

Drain-Source-Diode Forward Current

1.25

A

Drain Power Dissipation

1.25

W

0.8

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Resistance, Junction to Ambient

100

℃/W

2

3

1

GS

D

1

2

3

KNC