KMA3D7P20SA_15 datasheet(2/4 Pages) KEC

부품명	KMA3D7P20SA

상세설명	P-Ch Trench MOSFET

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제조업체	KEC [KEC(Korea Electronics)]

홈페이지	http://www.keccorp.com

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2 / 4 page

2009. 6. 10

2/4

KMA3D7P20SA

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain to Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250μ

A

-20

-

V

Drain Cut-off Current

IDSS

VGS=0V, VDS=-20V

-

-1

μA

Gate to Source Leakage Current

IGSS

VGS=±12V, VDS=0V

-

±100

nA

Gate to Source Threshold Voltage

Vth

VDS=VGS, ID=-250μ

A

-0.55

-

-1.5

V

Drain to Source On Resistance

RDS(ON)

VGS=-4.5V, ID=-2.8A

(Note2)

-

65

76

m

Ω

VGS=-2.5V, ID=-2.3A

(Note2)

-

90

112

Dynamic

Input Capacitance

Ciss

VDS=-10V, f=1MHz,

VGS=0V

-

443

-

pF

Output Capacitance

Coss

-

92

-

Reverse Transfer Capacitance

Crss

-

51

-

Total Gate Charge

Qg

VDS=-10V, ID=-2.8A,

VGS=-4.5V

(Note2)

-

4.37

-

nC

Gate to Source Charge

Qgs

-

0.54

-

Gate to Drain Charge

Qgd

-

1.54

-

Turn-on Delay time

td(on)

VDD=-10V, VGS=-4.5V ,

ID=-2.8A, RG=6Ω

(Note2)

-

6.2

-

ns

Turn-on Rise time

tr

-

18

-

Turn-off Delay time

td(off)

-

50

-

Turn-off Fall time

tf

-

33

-

Source to Drain Diode Ratings

Source to Drain Forward Voltage

VSD

VGS=0V, IS=-1.0A

(Note2)

-

-0.8

-1.2

V

Note2) Pulse Test : Pulse width <300

㎲ , Duty cycle < 2%

유사한 부품 번호 - KMA3D7P20SA_15

제조업체	부품명	데이터시트	상세설명
KEC(Korea Electronics)	KMA3D7P20SA	81Kb / 4P	P-Ch Trench MOSFET

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유사한 설명 - KMA3D7P20SA_15

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유사한 부품 번호 - KMA3D7P20SA_15

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