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IRF40B207 데이터시트(PDF) 2 Page - International Rectifier |
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IRF40B207 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 1, 2015 IRF40B207 Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.052mH, RG = 50, IAS = 57A, VGS =10V. ISD 57A, di/dt 860A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V. Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 95 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 67 IDM Pulsed Drain Current 380 PD @TC = 25°C Maximum Power Dissipation 83 W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 20 V TJ Operating Junction and -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 85 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 167 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 1.8 °C/W RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) ––– 3.6 4.5 m VGS = 10V, ID = 57A ––– 5.4 ––– VGS = 6.0V, ID = 29A VGS(th) Gate Threshold Voltage 2.2 3.0 3.9 V VDS = VGS, ID = 50µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =40 V, VGS = 0V ––– ––– 150 VDS =40V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.0 ––– Static Drain-to-Source On-Resistance |
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