IRF540NSPbF

IRF540NLPbF

3/18/04

www.irf.com

1

S

D

G

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF540NL) is available for low-

profile applications.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

‡

33

‡

23

A

Pulsed Drain Current

‡

110

Power Dissipation

130

W

Linear Derating Factor

0.87

W/°C

Gate-to-Source Voltage

± 20

V

Avalanche Current



16

A

Repetitive Avalanche Energy



13

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ‡

7.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

IRF540NSPbF

TO-262

IRF540NLPbF

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.15

Junction-to-Ambient (PCB mount)**

–––

40

Thermal Resistance

°C/W

PD - 95130