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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF1010ELPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF1010ELPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRF1010ES/LPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V trr Reverse Recovery Time ––– 73 110 ns TJ = 25°C, IF = 50A Qrr Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 84 330 A Notes:
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 12 m Ω VGS = 10V, ID = 50A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 69 ––– ––– S VDS = 25V, ID = 50A ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 130 ID = 50A Qgs Gate-to-Source Charge ––– ––– 28 nC VDS = 48V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 44 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 30V tr Rise Time ––– 78 ––– ID = 50A td(off) Turn-Off Delay Time ––– 48 ––– RG = 3.6Ω tf Fall Time ––– 53 ––– VGS = 10V, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3210 ––– VGS = 0V Coss Output Capacitance ––– 690 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1180
320 mJ IAS = 50A, L = 260µH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25°C, L = 260µH RG = 25Ω, IAS = 50A, VGS =10V (See Figure 12) ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%. |
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