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IRF6637PBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF6637PBF
상세설명  Low Conduction Losses and Switching Losses
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6637PBF 데이터시트(HTML) 1 Page - International Rectifier

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www.irf.com
1
5/5/06
DirectFET
™ Power MOSFET ‚
Description
The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6637PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6637PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including R
DS(on) and gate charge to minimize losses in the control FET socket.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.52mH, RG = 25Ω, IAS = 11A.
Notes:
0
4
8
1216
2024
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 24V
VDS= 15V
ID= 11A
DirectFET
™ ISOMETRIC
MP
SQ
SX
ST
MQ
MX
MT
MP
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 5.7m
Ω@ 10V 8.2mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC
4.0nC
1.0nC
20nC
9.9nC
1.8V
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
5
10
15
20
25
TJ = 25°C
TJ = 125°C
ID = 14A
PD - 97088
l RoHS Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

IRF6637PbF
IRF6637TRPbF
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
Max.
11
59
110
±20
30
14
31
11


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