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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF6893MPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF6893MPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6893MTRPbF 2 www.irf.com Pulse width 400μs; duty cycle 2%. Notes: D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V VDSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.2 1.6 m ––– 1.6 2.1 VGS(th) Gate Threshold Voltage 1.1 1.6 2.1 V VDS = VGS, ID = 100μA VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -3.9 ––– mV/°C VDS = VGS, ID = 10mA IDSS Drain-to-Source Leakage Current ––– ––– 250 μA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 110 ––– ––– S Qg Total Gate Charge ––– 25 38 Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.5 ––– nC Qgd Gate-to-Drain Charge ––– 8.5 ––– Qgodr Gate Charge Overdrive ––– 8.1 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 11 ––– Qoss Output Charge ––– 29 ––– nC RG Gate Resistance ––– 0.47 ––– td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 83 ––– ns td(off) Turn-Off Delay Time ––– 19 ––– tf Fall Time ––– 33 ––– Ciss Input Capacitance ––– 3480 ––– Coss Output Capacitance ––– 1140 ––– pF Crss Reverse Transfer Capacitance ––– 210 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) A ISM Pulsed Source Current (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 0.75 V trr Reverse Recovery Time ––– 22 33 ns Qrr Reverse Recovery Charge ––– 36 54 nC Conditions VGS = 0V, ID = 1.0mA ID = 10mA ( 25°C-125°C) VGS = 10V, ID = 29A i VDS =13V, ID = 23A VDS = 16V, VGS = 0V MOSFET symbol RG= 1.8 VDS = 13V VGS = 4.5V, ID = 23A i VGS = 16V VGS = -16V VDS = 20V, VGS = 0V Conditions ƒ = 1.0MHz VGS = 4.5V ID = 23A VGS = 0V VDS = 13V ID = 23A VDD = 13V, VGS = 4.5V i di/dt = 400A/μs i TJ = 25°C, IS = 23A, VGS = 0V i showing the integral reverse p-n junction diode. TJ = 25°C, IF =23A ––– ––– 126 ––– ––– 230 |
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유사한 설명 - IRF6893MPBF_15 |
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