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IRF7205PBF-1 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF7205PBF-1
상세설명  Industry-standard pinout SO-8 Package
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF7205PBF-1 데이터시트(HTML) 2 Page - International Rectifier

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June 30, 2014
IRF7205PbF-1
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– -0.024 –––
V/°C Reference to 25°C, ID = -1mA
––– ––– 0.070
VGS = -10V, ID = -4.6A ƒ
––– ––– 0.130
VGS = -4.5V, ID = -2.0A ƒ
VGS(th)
Gate Threshold Voltage
-1.0 ––– -3.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
––– 6.6 –––
S
VDS = -15V, ID = -4.6A ƒ
––– ––– -1.0
VDS = -24V, VGS = 0V
––– ––– -5.0
VDS = -15V, VGS = 0V, TJ = 70 °C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
–––
27
40
ID = -4.6A
Qgs
Gate-to-Source Charge
––– 5.2 –––
nC
VDS = -15V
Qgd
Gate-to-Drain ("Miller") Charge
––– 7.5 –––
VGS = -10V ƒ
td(on)
Turn-On Delay Time
–––
14
30
VDD = -15V
tr
Rise Time
–––
21
60
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
97
150
RG = 6.0Ω
tf
Fall Time
–––
71
100
RD = 10Ω ƒ
Between lead,6mm(0.25in.)
from package and center
of die contact
Ciss
Input Capacitance
––– 870 –––
VGS = 0V
Coss
Output Capacitance
––– 720 –––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
––– 220 –––
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -1.25A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
70
100
ns
TJ = 25°C, IF = -4.6A
Qrr
Reverse RecoveryCharge
––– 100 180
nC
di/dt = 100A/µs ƒ
ton
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
-15
––– ––– -2.5
A
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
––– 4.0
–––
LD
Internal Drain Inductance
––– 2.5
–––
nH
ns
nA
µA
Ω
RDS(ON)
Static Drain-to-Source On-Resistance
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD ≤ -4.6A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
S
D
G
S
D
G


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