전자부품 데이터시트 검색엔진 |
|
IRF7317PBF 데이터시트(PDF) 2 Page - International Rectifier |
|
IRF7317PBF 데이터시트(HTML) 2 Page - International Rectifier |
2 / 10 page IRF7317PbF
Surface mounted on FR-4 board, t ≤ 10sec. Parameter Min. Typ. Max. Units Conditions N-Ch 20 VGS = 0V, ID = 250µA P-Ch -20 VGS = 0V, ID = -250µA N-Ch 0.027 Reference to 25°C, ID = 1mA P-Ch 0.031 Reference to 25°C, ID = -1mA 0.023 0.029 VGS = 4.5V, ID = 6.0A 0.030 0.046 VGS = 2.7V, ID = 5.2A 0.049 0.058 VGS = -4.5V, ID = -2.9A 0.082 0.098 VGS = -2.7V, ID = -1.5A N-Ch 0.7 VDS = VGS, ID = 250µA P-Ch -0.7 VDS = VGS, ID = -250µA N-Ch 20 VDS = 10V, ID = 6.0A P-Ch 5.9 VDS = -10V, ID = -1.5A N-Ch 1.0 VDS = 16V, VGS = 0V P-Ch -1.0 VDS = -16V, VGS = 0V N-Ch 5.0 VDS = 16V, VGS = 0V, TJ = 55°C P-Ch -25 VDS = -16V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage N-P ±100 VGS = ±12V N-Ch 18 27 P-Ch 19 29 N-Ch 2.2 3.3 P-Ch 4.0 6.1 N-Ch 6.2 9.3 P-Ch 7.7 12 N-Ch 8.1 12 P-Ch 15 22 N-Ch 17 25 P-Ch 40 60 N-Ch 38 57 P-Ch 42 63 N-Ch 31 47 P-Ch 49 73 N-Ch 900 P-Ch 780 N-Ch 430 pF P-Ch 470 N-Ch 200 P-Ch 240 V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns N-Channel ID = 6.0A, VDS = 10V, VGS = 4.5V P-Channel ID = -2.9A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -2.9A, RG = 6.0Ω, RD = 3.4Ω N-Channel VGS = 0V, VDS = 15V, = 1.0MHz P-Channel VGS = 0V, VDS = -15V, = 1.0MHz N-Ch P-Ch Parameter Min. Typ. Max. Units Conditions N-Ch 2.5 P-Ch -2.5 N-Ch 26 P-Ch -21 N-Ch 0.72 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V P-Ch -0.78 -1.0 TJ = 25°C, IS = -2.9A, VGS = 0V N-Ch 52 77 P-Ch 47 71 N-Ch 58 86 P-Ch 49 73 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF =1.7A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -2.9A, di/dt = 100A/µs N-Channel ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A. nA |
유사한 부품 번호 - IRF7317PBF_15 |
|
유사한 설명 - IRF7317PBF_15 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |