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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7420PBF-1 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7420PBF-1 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7420PbF-1 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time ––– 62 93 ns TJ = 25°C, IF = -2.5A Qrr Reverse Recovery Charge ––– 61 92 μC di/dt = -100A/μs Source-Drain Ratings and Characteristics A -46 -2.5 S D G Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400μs; duty cycle ≤ 2%. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Surface mounted on 1 in square Cu board, t ≤ 10sec. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 14 VGS = -4.5V, ID = -11.5A ––– 17.5 VGS = -2.5V, ID = -9.8A ––– 26 VGS = -1.8V, ID = -8.1A VGS(th) Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250μA gfs Forward Transconductance 32 ––– ––– S VDS = -10V, ID = -11.5A ––– ––– -1.0 VDS = -9.6V, VGS = 0V ––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V Qg Total Gate Charge ––– 38 ––– ID = -11.5A Qgs Gate-to-Source Charge ––– 8.1 ––– nC VDS = -6V Qgd Gate-to-Drain ("Miller") Charge ––– 8.7 ––– VGS = -4.5V td(on) Turn-On Delay Time ––– 8.8 13 VDD = -6V, VGS = -4.5V tr Rise Time ––– 8.8 13 ID = -1.0A td(off) Turn-Off Delay Time ––– 291 437 RD = 6 Ω tf Fall Time ––– 225 338 RG = 6 Ω Ciss Input Capacitance ––– 3529 ––– VGS = 0V Coss Output Capacitance ––– 1013 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 656 ––– ƒ = 1.0MHz IGSS μA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
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