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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF8302MPBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF8302MPBF 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 9 page  HEXFET® Power MOSFET plus Schottky Diode Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.83mH, RG = 25Ω, IAS = 25A. Notes: DirectFET ISOMETRIC MX SQ SX ST MQ MX MT MP Description The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF8302MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. l RoHs Compliant and Halogen-Free l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 6 ID = 31A TJ = 25°C TJ = 125°C VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.4m Ω@ 10V 2.2mΩ@ 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 25 Max. 25 190 250 ±20 30 31 260 0 102030405060708090 100 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 24V VDS= 15V VDS= 6.0V ID= 25A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 35nC 8.9nC 5.1nC 40nC 29nC 1.8V IRF8302MPbF 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 17, 2014 Orderable Part Number Form Quantity IRF8302MPbF DirectFET MX Tape and Reel 4800 IRF8302MTRPbF Base Part number Package Type Standard Pack |
유사한 부품 번호 - IRF8302MPBF_15 |
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유사한 설명 - IRF8302MPBF_15 |
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