전자부품 데이터시트 검색엔진 |
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IRF8306MPBF 데이터시트(PDF) 7 Page - International Rectifier |
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IRF8306MPBF 데이터시트(HTML) 7 Page - International Rectifier |
7 / 10 page 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 7, 2014 IRF8306MPbF Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period *** VGS = 5V for Logic Level Devices *** + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T ** * * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G S G=GATE D=DRAIN S=SOURCE S D D D D Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ |
유사한 부품 번호 - IRF8306MPBF_15 |
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유사한 설명 - IRF8306MPBF_15 |
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