전자부품 데이터시트 검색엔진 |
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BF820W 데이터시트(PDF) 2 Page - NXP Semiconductors |
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BF820W 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 2003 Sep 09 2 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT323) and symbol. handbook, halfpage 2 3 1 MAM062 3 2 1 Top view MARKING Notes 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. TYPE NUMBER MARKING CODE(1) BF820W 1V* QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 300 V VCEO collector-emitter voltage open base − 300 V ICM peak collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C − 200 mW hFE DC current gain IC = 25 mA; VCE = 20 V 50 − Cre feedback capacitance IC = ic = 0; VCB = 30 V; f = 1 MHz − 1.6 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz |
유사한 부품 번호 - BF820W_15 |
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유사한 설명 - BF820W_15 |
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