IRF8788PBF-1_15 datasheet(1/9 Pages) IRF

부품명	IRF8788PBF-1

상세설명	Industry-standard pinout SO-8 Package

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제조업체	IRF [International Rectifier]

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HEXFET® Power MOSFET

Notes

through are on page 9

Top View

8

1

2

3

4

5

6

7

D

G

S

A

S

A

SO-8

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

PD @TA = 70°C

Power Dissipation

Linear Derating Factor

W/°C

TJ

Operating Junction and

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

g

–––

20

RθJA

Junction-to-Ambient

fg

–––

50

°C/W

V

A

W

°C

Max.

24

19

190

±20

30

-55 to + 150

2.5

0.02

1.6

IRF8788PbF-1

VDS

30

V

RDS(on) max

(@VGS = 10V)

2.8

RDS(on) max

(@VGS = 4.5V)

3.8

Qg (typical)

44

nC

ID

(@TA = 25°C)

24

A

mΩ

Features

Benefits

Industry-standard pinout SO-8 Package

⇒

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant, Halogen-Free

Environmentally Friendlier

MSL1, Industrial qualification

Increased Reliability

Form

Quantity

Tube/Bulk

95

IRF8788PbF-1

Tape and Reel

4000

IRF8788TRPbF-1

Package Type

Standard Pack

Orderable Part Number

IRF8788PbF-1

SO-8

Base Part Number

1

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June 23, 2014

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