IRF9393PBF datasheet(5/8 Pages) IRF

부품명	IRF9393PBF

상세설명	Industry-Standard SO8 Package

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IRF9393PbF

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Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

Fig 13. Typical On-Resistance vs. Drain Current

Fig 16

. Typical Power vs. Time

* Reverse Polarity of D.U.T for P-Channel

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

Inductor Current

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

• di/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

-

+

-

RG

VDD

D.U.T

*

Fig 17.

Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs

2

4

6

8

10

12

14

16

18

20

-VGS, Gate -to -Source Voltage (V)

10

20

30

40

50

60

TJ = 125°C

TJ = 25°C

ID = -9.4A

0

10

20

30

40

50

60

70

-ID, Drain Current (A)

10

20

30

40

50

60

70

80

VGS = -10V

VGS = -4.5V

25

50

75

100

125

150

Starting TJ , Junction Temperature (°C)

0

60

120

180

240

300

360

420

ID

TOP

-2.1A

-3.0A

BOTTOM -7.5A

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Time (sec)

0

200

400

600

800

1000

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