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BCX19 데이터시트(PDF) 3 Page - NXP Semiconductors

부품명 BCX19
상세설명  NPN general purpose transistor
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCX19 데이터시트(HTML) 3 Page - NXP Semiconductors

  BCX19_15 Datasheet HTML 1Page - NXP Semiconductors BCX19_15 Datasheet HTML 2Page - NXP Semiconductors BCX19_15 Datasheet HTML 3Page - NXP Semiconductors BCX19_15 Datasheet HTML 4Page - NXP Semiconductors BCX19_15 Datasheet HTML 5Page - NXP Semiconductors BCX19_15 Datasheet HTML 6Page - NXP Semiconductors  
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2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN general purpose transistor
BCX19
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2.
VBE decreases by approximately −2 mV/°C with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 20 V
100
nA
IE = 0; VCB = 20 V; Tj = 150 °C
5
μA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
100
nA
hFE
DC current gain
VCE = 1 V; note 1
IC = 100 mA
100
600
IC = 300 mA
70
IC = 500 mA
40
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 50 mA; note 2
620
mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 1 V; notes 1 and 2
1.2
V
Cc
collector capacitance
IE = Ie = 0; VCB = 10 V; f = 1 MHz
5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz


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