전자부품 데이터시트 검색엔진 |
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BCX19 데이터시트(PDF) 3 Page - NXP Semiconductors |
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BCX19 데이터시트(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 2004 Jan 16 3 NXP Semiconductors Product data sheet NPN general purpose transistor BCX19 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. Notes 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2. VBE decreases by approximately −2 mV/°C with increasing temperature. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 20 V − − 100 nA IE = 0; VCB = 20 V; Tj = 150 °C − − 5 μA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain VCE = 1 V; note 1 IC = 100 mA 100 − 600 IC = 300 mA 70 − − IC = 500 mA 40 − − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 2 − − 620 mV VBE base-emitter voltage IC = 500 mA; VCE = 1 V; notes 1 and 2 − − 1.2 V Cc collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz − 5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz |
유사한 부품 번호 - BCX19_15 |
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유사한 설명 - BCX19_15 |
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