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BCX71 데이터시트(PDF) 4 Page - NXP Semiconductors

부품명 BCX71
상세설명  PNP general purpose transistors
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCX71 데이터시트(HTML) 4 Page - NXP Semiconductors

  BCX71_15 Datasheet HTML 1Page - NXP Semiconductors BCX71_15 Datasheet HTML 2Page - NXP Semiconductors BCX71_15 Datasheet HTML 3Page - NXP Semiconductors BCX71_15 Datasheet HTML 4Page - NXP Semiconductors BCX71_15 Datasheet HTML 5Page - NXP Semiconductors BCX71_15 Datasheet HTML 6Page - NXP Semiconductors BCX71_15 Datasheet HTML 7Page - NXP Semiconductors  
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2004 Feb 16
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BCX71 series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0; VCB = −45 V
−20
nA
IE = 0; VCB = −45 V; Tamb = 150 °C
−20
μA
IEBO
emitter-base cut-off current
IC = 0; VEB = −4 V
−20
nA
hFE
DC current gain
IC = −10 μA; VCE = −5 V
BCX71H
30
BCX71J
40
BCX71K
100
DC current gain
IC = −2 mA; VCE = −5 V
BCX71H
180
310
BCX71J
250
460
BCX71K
380
630
DC current gain
IC = −50 mA; VCE = −1 V; note 1
BCX71H
80
BCX71J
100
BCX71K
110
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.25 mA
−60
−250
mV
IC = −50 mA; IB = −1.25 mA; note 1
−120
−550
mV
VBEsat
base-emitter saturation
voltage
IC = −10 mA; IB = −0.25 mA
−600
−850
mV
IC = −50 mA; IB = −1.25 mA; note 1
−680
−1050 mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V
−600
−650
−750
mV
IC = −10 μA; VCE = −5 V
−550
mV
IC = −50 mA; VCE = −1 V; note 1
−720
mV
Cc
collector capacitance
IE = Ie = 0; VCB = −10 V; f = 1 MHz
4.5
pF
Ce
emitter capacitance
IC = Ic = 0; VEB = −0.5 V; f = 1 MHz
11
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
MHz
F
noise figure
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
2
6
dB


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