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2SC5569-TD-E 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 2SC5569-TD-E
상세설명  Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SC5569-TD-E 데이터시트(HTML) 2 Page - ON Semiconductor

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2SA2016 / 2SC5569
No.6309-2/8
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Current
IC
(--)7
A
Collector Current (Pulse)
ICP
(--)10
A
Base Current
IB
(--)1.2
A
Collector Dissipation
PC
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
μA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(290)330
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(50)28
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=(--)3.5A, IB=(--)175mA
(--230)160
(--390)240
mV
VCE(sat)2
IC=(--)2A, IB=(--)40mA
(--240)110
(--400)170
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)40mA
(--)0.83
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=(--)100μA, RBE=0Ω
(--50)100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
(40)30
ns
Storage Time
tstg
(225)420
ns
Fall Time
tf
25
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA2016-TD-E
PCP
1,000pcs./reel
Pb Free
2SC5569-TD-E
PCP
1,000pcs./reel
VR
RB
VCC=25V
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
μF
470
μF
PW=20
μs
IB1
D.C.
≤1%
IB2
IC=20IB1= --20IB2=2.5A
For PNP, the polarity is reversed.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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