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IRFP90N20DPBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRFP90N20DPBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 9 page Notes through o are on page 8 www.irf.com 1 7/30/04 IRFP90N20DPbF SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 200V 0.023 Ω 94Ao Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 94 o ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 66 A IDM Pulsed Drain Current 380 PD @TC = 25°C Power Dissipation 580 W Linear Derating Factor 3.8 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 6.7 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings l High frequency DC-DC converters l Lead-Free Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-247AC PD - 95664 Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.26 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 |
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