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IRFP250MPBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFP250MPBF
상세설명  Advanced Process Technology
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP250MPBF 데이터시트(HTML) 1 Page - International Rectifier

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IRFP250MPbF
HEXFET® Power MOSFET
03/01/10
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
30
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
21
A
IDM
Pulsed Drain Current

120
PD @TC = 25°C
Power Dissipation
214
W
Linear Derating Factor
1.4
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
315
mJ
IAR
Avalanche Current

30
A
EAR
Repetitive Avalanche Energy

21
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
8.6
V/ns
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.7
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
www.irf.com
1
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Description
VDSS = 200V
RDS(on) = 0.075Ω
ID = 30A
S
D
G
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
TO-247AC
PD - 96292
l Lead-Free


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